D.F. Reyes - Concepedia

Author

D.F. Reyes

Also Known As

Becker-Dreps, Sylvia, D F Reyes, D. F. Reyes, D. FERNÁNDEZ‐REYES, D. Fernández, D. Fernández de los Reyes, D. Fernández-Reyes, D.F Reyes, D.F. Reyes, Daniel Fernandez de los Reyes

101

Publications

806

Citations

H-Index

Concepts

All Affiliations

Universidad de Cádiz Universidad Politécnica de Madrid University of Sheffield Universidad de Zaragoza Instituto de Nanociencia y Materiales de Aragón

About

D.F. Reyes is an author at Universidad de Cádiz specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	22	423
2	Applied Physics	15	21	405
3	Electrical Engineering	7	7	129
4	Natural Sciences	3	3	50
5	Chemistry	1	1	15

D.F. Reyes

Publications

631

Citations

H-Index

Page 1

	Year	Citations
Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures D.F. Reyes, F. Bastiman, Chris J Hunter, Nanoscale Research Letters	2014	61
Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate A. D. Utrilla, Davide F. Grossi, D.F. Reyes, Applied Surface Science Materials ScienceNanoscale SystemCapping RateEngineeringNanotechnology	2018	32
High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing J. M. Ulloa, J. M. Llorens, Benito Alén, Applied Physics Letters Optical MaterialsEngineeringHigh Efficient LuminescenceOptoelectronic DevicesQuantum Engineering	2012	31
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells A. D. Utrilla, D.F. Reyes, J. M. Llorens, Solar Energy Materials and Solar Cells Ii-vi SemiconductorElectrical EngineeringImproved PerformanceEngineeringQuantum Dots	2016	29
Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy L. Domínguez, D.F. Reyes, F. Bastiman, Applied Physics Express	2013	28
General route for the decomposition of InAs quantum dots during the capping process D. González, D.F. Reyes, A. D. Utrilla, Nanotechnology EngineeringSemiconductor NanostructuresIi-vi SemiconductorQuantum ComputingCapping Process	2016	25
Strain-balanced type-II superlattices for efficient multi-junction solar cells Alicia Gonzalo, A. D. Utrilla, D.F. Reyes, Scientific Reports	2017	25
Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process D. González, V. Braza, A. D. Utrilla, Nanotechnology Materials ScienceMaterials EngineeringIi-vi SemiconductorCl Growth RateGrowth Rates	2017	24
Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer J. M. Ulloa, D.F. Reyes, Kenji Yamamoto, Applied Physics Letters Materials ScienceInas/gaas Quantum DotsIi-vi SemiconductorIndependent TuningHole Confinement	2012	23
Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications D.F. Reyes, V. Braza, Alicia Gonzalo, Applied Surface Science Ii-vi SemiconductorSolar Cell ApplicationsElectrical EngineeringEngineeringN Distribution	2018	21

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