Applied Physics Letters · 2012 · 31 citations · 23 references
Optical MaterialsEngineeringHigh Efficient LuminescenceOptoelectronic DevicesQuantum EngineeringSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorElectronic DevicesPhotodetectorsQuantum DotsCompound SemiconductorMaterials SciencePhotoluminescencePhysicsOptoelectronic MaterialsQd ShapeApplied PhysicsHomogeneous CompositionOptoelectronicsPhotoluminescence Efficiency
The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition.
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nextnano: General Purpose 3-D Simulations
Stefan Birner, T. Zibold, Till F. M. Andlauer et al. · IEEE Transactions on Electron Devices · 2007 · 627 citations
Engineering, 3D Modeling, Simulation +20
Type-II quantum-well lasers for the mid-wavelength infrared
J. R. Meyer, C. A. Hoffman, F. J. Bartoli et al. · Applied Physics Letters · 1995 · 423 citations