Journal of Crystal Growth · 2013 · 63 citations · 28 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCompound SemiconductorsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsMolecular Beam Epitaxy
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Dynamics of film growth of GaAs by MBE from Rheed observations
J.H. Neave, B.A. Joyce, Peter J. Dobson et al. · Applied Physics A · 1983 · 958 citations
Natural Sciences, Materials Engineering, Materials Science +14
Molecular beam epitaxy growth of GaAs1−xBix
S. Tixier, M. Adamcyk, T. Tiedje et al. · Applied Physics Letters · 2003 · 453 citations
Natural Sciences, Materials Engineering, Materials Science +17
Valence band anticrossing in GaBixAs1−x
Kirstin Alberi, O. D. Dubón, W. Walukiewicz et al. · Applied Physics Letters · 2007 · 316 citations