The theory of quantum-dot infrared phototransistors

Abstract

A novel device - the quantum-dot infrared phototransistor (QDIP) - is proposed and considered theoretically. The QDIP utilizes intersubband electron transitions from the bound states. The dark current and sensitivity are calculated using a proposed analytical model of the QDIP. It is shown that the QDIP can exhibit low dark current, high photoelectric gain and sensitivity surpassing the characteristics of other intersubband photodetectors.