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Characterization of homoepitaxial <i>p</i>-type ZnO grown by molecular beam epitaxy

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Engineering, Materials Engineering, Materials Science +17

Heterojunction band offset engineering

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Engineering, Electrical Engineering, Materials Science +11

Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes

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Engineering, Materials Engineering, Materials Science +17

Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices

R. D. Vispute, V. Talyansky, Supab Choopun et al. · Applied Physics Letters · 1998 · 439 citations

Engineering, Materials Engineering, Materials Science +17