Japanese Journal of Applied Physics · 1993 · 30 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesThin FilmsCmos Circuit DesignIntegrated Circuit DesignIntegrated Circuit FabricationSilicon MaterialsThin Film Surface MorphologyThin-film TransistorsAnnealingAnnealing EffectsAnnealing ProcessesCmos Fabrication ProcessesExcimer LasersGrain Size ImprovementPolycrystalline Silicon Thin-film TransistorsSilicon Thin Films
Uniform performance in poly-Si thin-film transistors (TFTs) has been successfully achieved by excimer laser annealing. Mobility and its uniformity over a substrate were 59±3 cm 2 /V·s for n-channel TFTs and 45±5 cm 2 /V·s for p-channel types. To achieve uniform performance, we combined step annealing that uses two energy levels, and small-pitch annealing that moves a beam forward by a small pitch. The proposed method can improve surface morphology and uniformity of grain size in poly-Si. A 400-stage CMOS shift register composed of these TFTs could operate at 5 V, and attained the speed of 1 MHz at 8 V.
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