Anomalous temperature dependence of the ordered Ga0.5In0.5P photoluminescence spectrum

Abstract

The temperature dependence of the photoluminescence spectrum of Ga0.5 In0.5 P/GaAs grown by organometallic vapor phase epitaxy is measured. Samples with a highly long-range ordered structure show anomalous behavior, where peak energy changes with temperature exhibiting Z-shape dependence. In the range between 100 and 30 K, peak energy decreases monotonously with decreasing temperature, and below 30 K, begins to increase, splitting into two peaks. The most probable cause of this behavior is crystal defects related to the long-range ordered structure.