Comparison of high resolution negative electron beam resists

Abstract

Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000.1XP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6∕O2∕CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2. 20nm half-pitch lines and 10nm lines with a pitch down to 60nm are written and transferred into silicon.