Theory for high Q p-n junction avalanche inductors

Abstract

A simple theory for p-n junction inductors is presented. The theory explains the previously measured inductances of p-n junction inductors very well. It shows that the measured low quality factors of the earlier report are due to the unnecessary space charge resistances of the p-n junctions adopted in the experiment. A simple theoretical design example of high Q p-n junction inductors is shown to be readily available in silicon.