A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

Ting Lei, M. Fanciulli, R. J. Molnar et al. · Applied Physics Letters · 1991 · 370 citations

Materials Science, Semiconductors, Wurtzitic Gan Films +10

Growth of cubic phase gallium nitride by modified molecular-beam epitaxy

Michael J. Paisley, Zlatko Sitar, J. B. Posthill et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 362 citations

Materials Science, Crystal Structure, Electrical Engineering +13

An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

S. Strite, J. Ruan, Z. Li et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 328 citations

Wide-bandgap Semiconductor, Crystal Structure, Electrical Engineering +14

On the origin of free carriers in high‐conducting n‐GaN

W. Seifert, R. Franzheld, E. Butter et al. · Crystal Research and Technology · 1983 · 146 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

Molecular Beam Epitaxy: Thin Film Growth and Surface Studies

T. D. Moustakas · MRS Bulletin · 1988 · 16 citations

Materials Science, Engineering, Surface Science +4