A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

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	Year	Citations
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon Ting Lei, M. Fanciulli, R. J. Molnar, Applied Physics Letters Materials ScienceSemiconductorsWurtzitic Gan FilmsZinc Blende StructureEngineering	1991	370
Growth of cubic phase gallium nitride by modified molecular-beam epitaxy Michael J. Paisley, Zlatko Sitar, J. B. Posthill, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceCrystal StructureElectrical EngineeringWide-bandgap SemiconductorEngineering	1989	362
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy S. Strite, J. Ruan, Z. Li, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Wide-bandgap SemiconductorCrystal StructureElectrical EngineeringEngineeringPhysics	1991	328
On the origin of free carriers in high‐conducting n‐GaN W. Seifert, R. Franzheld, E. Butter, Crystal Research and Technology SemiconductorsWide-bandgap SemiconductorElectrical EngineeringChemical EngineeringEngineering	1983	146
Molecular Beam Epitaxy: Thin Film Growth and Surface Studies T. D. Moustakas MRS Bulletin Materials ScienceEngineeringSurface ScienceApplied PhysicsThin Films	1988	16

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