Journal of Applied Physics · 1982 · 121 citations · 13 references
Natural SciencesChemistryMaterials ScienceChemical KineticsInorganic ChemistryPhysical ChemistryChemical BondingChemical Reaction KineticsChemical ReactionsReaction MechanismsSilicon MaterialsFluorine ChemistryGas-phase ReactionsMass Spectrometric DetectionMolecular Beam ExperimentsMolecular Beam SpectroscopySiliconSilicon ChemistrySilicon Dioxide
SiF2 and SiF4 have been identified as gas phase products of the reaction between atomic fluorine and silicon. Atomic fluorine is supplied by a low density molecular beam hitting a silicon target in a high vacuum. Reaction products were detected by mass spectrometric measurements. Activation energies for the production of SiF2 and SiF4 were found to be 0.09±0.02 and 0.15±0.02 eV/°K, respectively, in good agreement with the values measured by flowing afterglow techniques. The reaction probability for the reaction 4F+Si→SiF4 was found to be 0.016 at 100 °C.
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The etching of silicon with XeF2 vapor
Harold F. Winters, J. W. Coburn · Applied Physics Letters · 1979 · 303 citations
Ion-surface interactions in plasma etching
J. W. Coburn, Harold F. Winters, T. J. Chuang · Journal of Applied Physics · 1977 · 216 citations