Current and capacitance transient responses of MOS capacitor. I. General theory and applications to initially depleted surface without surface states

Abstract

The general theory of high frequency capacitance and current transients under arbitrary applied voltage transient is developed which includes both surface states and nonuniform spatial distribution of bulk generation—recombination centers. It is then applied to the special case of initially depleted surface without surface states and with a constant bulk center concentration. Experimental examples are given using gold doped Si devices to illustrate the evaluation of the concentrations of the gold centers and majority shallow level impurity and of the thermal emission rates of trapped electrons and holes at the gold centers in the surface space charge layer.