First AlGaN/GaN metal oxide semiconductor heterostructurefieldeffect transistor based on photoanodic oxide

Abstract

The DC characteristics of an AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor are presented. The unique feature of this device is its oxide, which is formed photoelectrochemically at room temperature. For a device with a gate length of 2 µm state-of-the-art values of 540 mA/mm and 62 mS/mm were obtained for the drain current and transconductance, respectively.