Au/CdS Schottky Diode Fabricated with Nanocrystalline CdS Layer

Abstract

Schottky diodes of structure Au/nano-CdS/CBD-CdS/SnO2 were fabricated with the nanocrystalline CdS layer deposited by the high pressure magnetron sputtering technique. The devices were characterized by current–voltage (I–V) and capacitance–voltage (C–V) measurements. It was observed that the presence of a large amount of surface states might explain the high values of n in the nano-devices. The quantization effects of the active nano-CdS layer in the devices was confirmed from the observed peaks in the plot of conductance versus reverse bias voltage.