Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As

Abstract

We report improvements in the crystallinity of a III–V-based diluted magnetic semiconductor (Ga, Mn)As by heat treatment (annealing) after growth at comparatively low temperatures. This method can be used to raise the Curie temperature to 100 K without the need for severe optimization of growth conditions, as well as to adjust the material parameters to desired values.