Magnetoconductance of pinched silicon accumulation layers

Abstract

The magnetoconductance of ultranarrow Si accumulation layers has been measured using a pinched metal-oxide-semiconductor field-effect transistor. The data have two noteworthy features. First, the electron density inferred from Shubnikov--de Haas oscillations is much smaller than that expected for our device. Also, structure in the magnetoconductance persists down to low gate voltages where the temperature-dependent conductance appears to be in the limit of one-dimensional strong localization.