High-quality metamorphic compositionally graded InGaAs buffers

Dislocations in strained-layer epitaxy: theory, experiment, and applications

Eugene A. Fitzgerald · Materials Science Reports · 1991 · 569 citations

Natural Sciences, Materials Engineering, Materials Science +12

Relaxed Ge<i>x</i>Si1−<i>x</i> structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

Eugene A. Fitzgerald, Ya‐Hong Xie, D. Monroe et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 532 citations

Engineering, Materials Science, Physics +17

Spinodal decomposition and clustering in III/V alloys

G. B. Stringfellow · Journal of Electronic Materials · 1982 · 174 citations

Natural Sciences, Materials Engineering, Materials Science +13

Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates

C. Andre, David M. Wilt, Arthur J. Pitera et al. · Journal of Applied Physics · 2005 · 135 citations

Engineering, Electrical Engineering, Materials Science +17

Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

Nathaniel J. Quitoriano, Eugene A. Fitzgerald · Journal of Applied Physics · 2007 · 109 citations

Engineering, Materials Engineering, Materials Science +17