Applied Physics Letters · 1980 · 31 citations · 7 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsEpitaxial GrowthLaser DiodesSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersDouble Heterostructure DevicesDouble HeterostructuresHeterostructure DevicesHeterostructure LasersLiquid Phase EpitaxyPulsed OperationQuantum Well LasersSemiconductor Laser Fabrication
InP-InGaAsP-InP double-heterostructure wafers with 1.5–1.6-μm wavelength range quaternary layers have been grown by liquid phase epitaxy. Any difficulties due to dissolution of the quaternary active layer during the growth of the following InP confining layer are avoided by reducing the liquid phase epitaxy growth temperature to 592 °C, nearly 40° lower than the temperature most frequently used. The lasers fabricated from the wafers operate continuously at 20 °C and emit light at 1.55 μm. The threshold current under cw operation was 250 mA and that under pulsed operation was 160 mA.
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Ultimate low-loss single-mode fibre at 1.55 μm
T. Miya, Y. Terunuma, T. Hosaka et al. · Electronics Letters · 1979 · 633 citations
S. Akiba, Kazuo Sakai, Takaya Yamamoto · Japanese Journal of Applied Physics · 1978 · 29 citations