InP-Ga<i>x</i>In1−<i>x</i>As<i>y</i>P1−<i>y</i> double heterostructure for 1.5 μm wavelength

Abstract

InP/GaxIn1−xAsyP1−y/GaxIn1 −x AsyP1−y double-heterostructure LED’s in a 1.5-μm-wavelength region have been fabricated by the LPE method. The half-width value of the spectrum is about 1100 Å, and the external quantum efficiency is 1.5% for undoped active layers of Ga0.28In0.72As0.77P0.23. The threshold current density of the laser oscillation at 1.52 μm and 300 K is 104 A/cm2 μm. No symptom of an initial degradation has been observed.