Applied Physics Letters · 1978 · 59 citations · 8 references
InP/GaxIn1−xAsyP1−y/GaxIn1 −x AsyP1−y double-heterostructure LED’s in a 1.5-μm-wavelength region have been fabricated by the LPE method. The half-width value of the spectrum is about 1100 Å, and the external quantum efficiency is 1.5% for undoped active layers of Ga0.28In0.72As0.77P0.23. The threshold current density of the laser oscillation at 1.52 μm and 300 K is 104 A/cm2 μm. No symptom of an initial degradation has been observed.
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