Journal of Alloys and Compounds · 2010 · 26 citations · 13 references
EngineeringMaterials SciencePhysicsElectronic MaterialsOptoelectronicsSemiconductor MaterialsDopingIii-v SemiconductorsOptical Properties Of SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsBoron IncorporationIn-situ DopingLow-temperature GrowthOptical PropertiesSemiconductor CharacterizationSurface Optical PropertiesTemperature Effects On Growth
13
Temperature dependence of the energy gap in semiconductors
Y. P. Varshni · Physica · 1967 · 5.3K citations
BGaInAs alloys lattice matched to GaAs
John F. Geisz, Daniel J. Friedman, J. M. Olson et al. · Applied Physics Letters · 2000 · 102 citations
Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs
Frank Dimroth, Alex Howard, J. K. Shurtleff et al. · Journal of Applied Physics · 2002 · 43 citations
Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers
G. Leibiger, C. Krahmer, Jens Bauer et al. · Journal of Crystal Growth · 2004 · 43 citations