2012 · 13 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationGraphene NanomaterialsInterface EngineeringSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesCapacitanceCapacitance-voltage CharacteristicsCapacitance-voltage CharacterizationCapacitance-voltage MeasurementsGrapheneGraphene-based MaterialsInterface Trap DensityInterface Trap Density Measurement
Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the graphene Fermi velocity extraction is shown. Similarities and differences in interface trap extraction procedure in graphene and silicon field-effect structures are briefly discussed.
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Density of States and Zero Landau Level Probed through Capacitance of Graphene
Rui Yang, Roman Gorbachev, Peter Blake et al. · Physical Review Letters · 2010 · 238 citations · Full text