Applied Physics Letters · 2009 · 246 citations · 15 references
Natural SciencesMaterials EngineeringMaterials ScienceElectrochemistryElectronic MaterialsThin FilmsDopingElectrical Properties Of CeramicsFerroelectric CeramicsFerroelectric MaterialsOxide SemiconductorsThin Film Electrical PropertiesFerroelectric PropertiesFerroelectric Thin FilmsHysteresisLeakage CurrentPulsed Laser DepositionThin Film FerroelectricsThin Oxide FilmsTraps
Polycrystalline BiFeO3 (BFO), Ti-doped BFO, Mn-doped BFO, and (Mn, Ti)-codoped BFO (BFMT) thin films were fabricated on Pt/SrTiO3 (100) substrate by pulsed laser deposition. Observed leakage current behavior in those ion-doped BFO films indicated the dominance of space-charge-limited current in the high electric field region. The leakage current of the BFMT film was much reduced in relation to the other films due to the formation of deep traps. In the BFMT film, well saturated P-E hysteresis curves were observed. Remanent polarization and coercive field for maximum electric field of 2100 kV/cm were 75 μC/cm2 and 310 kV/cm, respectively.
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