Atomic structure and electronic properties of HCl–isopropanol treated and vacuum annealed GaAs(100) surface

Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE

J. Massies, P. Étienne, F. Dézaly et al. · Surface Science · 1980 · 153 citations

Materials Science, Semiconductors, Engineering +8

Surface optical phonons and hydrogen chemisorption on polar and nonpolar faces of GaAs, InP, and GaP

Lawrence H. Dubois, G. P. Schwartz · Physical review. B, Condensed matter · 1982 · 153 citations

Optical Materials, Engineering, Crystal Face +16

Substrate chemical etching prior to molecular-beam epitaxy: An x-ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4-H2O2-H2O solution

J. Massies, J. P. Contour · Journal of Applied Physics · 1985 · 136 citations

H2so4-h2o2-h2o Solution, Engineering, Indium Soldering +18

Work function, electron affinity, and band bending at decapped GaAs(100) surfaces

W. Chen, M. Dumas, D. Mao et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 84 citations

Decapped Gaas, Engineering, Electron Affinity +18

Cleaning chemistry of GaAs(100) and InSb(100) substrates for molecular beam epitaxy

R. P. Vasquez, B. Lewis, F. J. Grunthaner · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1983 · 73 citations · Full text

Materials Science, Semiconductors, Chemical Engineering +13