Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots

1.3 μm room-temperature GaAs-based quantum-dot laser

Diana L. Huffaker, G. Park, Zhihui Zou et al. · Applied Physics Letters · 1998 · 761 citations

Engineering, Electrical Engineering, Materials Science +15

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Kenichi Nishi, Hideaki Saito, S. Sugou et al. · Applied Physics Letters · 1999 · 592 citations

Engineering, Materials Engineering, Materials Science +17

InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

V. M. Ustinov, N. A. Maleev, A. E. Zhukov et al. · Applied Physics Letters · 1999 · 378 citations

Engineering, Electrical Engineering, Materials Science +13

Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying

P. B. Joyce, T. J. Krzyzewski, Gavin R. Bell et al. · Physical review. B, Condensed matter · 1998 · 296 citations

Natural Sciences, Materials Science, Physics +17

Red-Emitting Semiconductor Quantum Dot Lasers

S. Fafard, Karin Hinzer, S. Raymond et al. · Science · 1996 · 292 citations

Engineering, Electrical Engineering, Materials Science +17