Concepedia

An XPS study to investigate the dependence of carbon ion fluences in the formation of buried SiC

P.R. Poudel, P.R. Poudel, Pramod Prasad Poudel, Pramod Prasad Poudel, Bibhudutta Rout, M. El Bouanani, Floyd D. McDaniel

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2012 · 14 citations · 17 references

DOI

Concepts

References

17

A Monte Carlo computer program for the transport of energetic ions in amorphous targets

J.P. Biersack, L.G. Haggmark · Nuclear Instruments and Methods · 1980 · 4.7K citations

, , +16

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

H. Morkoç̌, S. Strite, Guangjun Gao et al. · Journal of Applied Physics · 1994 · 2.7K citations

, , +17

Silicon carbide as a new MEMS technology

P.M. Sarro · Sensors and Actuators A Physical · 2000 · 416 citations

, , +14

Progress in silicon carbide semiconductor electronics technology

Philip G. Neudeck · Journal of Electronic Materials · 1995 · 271 citations

, , +12

FORMATION OF SiC IN SILICON BY ION IMPLANTATION

J. A. Borders, S. T. Picraux, W. Beezhold · Applied Physics Letters · 1971 · 178 citations · Full text

, , +15