Hydrodynamic simulation of a n + − n − n + silicon nanowire

Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

Seonghoon Jin, Massimo V. Fischetti, Ting-wei Tang · Journal of Applied Physics · 2007 · 315 citations

Engineering, Electrical Engineering, Physics +17

Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering

E. B. Ramayya, Dragica Vasileska, Stephen M. Goodnick et al. · Journal of Applied Physics · 2008 · 183 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Does source-to-drain tunneling limit the ultimate scaling of MOSFETs?

Jing Wang, Mark Lundstrom · 2003 · 155 citations

Engineering, Electrical Engineering, Microelectronics +14

Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

Marco Lenzi, Pierpaolo Palestri, Elena Gnani et al. · IEEE Transactions on Electron Devices · 2008 · 94 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Electron Mobility in Silicon Nanowires

E. B. Ramayya, Dragica Vasileska, Stephen M. Goodnick et al. · IEEE Transactions on Nanotechnology · 2007 · 89 citations · Full text

Engineering, Electrical Engineering, Physics +17