Properties of buried insulating layers in silicon formed by high dose implantation at 60 keV

High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealing

G. K. Celler, P.L.F. Hemment, K. W. West et al. · Applied Physics Letters · 1986 · 156 citations

Engineering, Materials Engineering, Materials Science +17

Silicon Oxynitride Films from the NO-NH[sub 3]-SiH[sub 4] Reaction

Myron J. Rand, James F. Roberts · Journal of The Electrochemical Society · 1973 · 95 citations

Natural Sciences, Chemistry, Materials Science +17

Properties of ion beam synthesized buried silicon nitride layers with rectangular nitrogen profiles

W. Skorupa, K. Wollschläger, R. Grötzschel et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1987 · 30 citations

Engineering, Materials Engineering, Materials Science +14

Microstructure of Silicon Implanted with High Doses of Nitrogen and Oxygen

L. Nesbit, George J. Slusser, Robert O. Frenette et al. · Journal of The Electrochemical Society · 1986 · 20 citations

Engineering, Materials Engineering, Materials Science +16

The formation of SiO2 films on silicon by high dose oxygen ion implantation

Edward Hensel, W. Skorupa, H. Johansen · Thin Solid Films · 1982 · 17 citations

Engineering, Materials Engineering, Materials Science +14