W. Skorupa

Amorphization and recrystallization of 6H-SiC by ion-beam irradiation

V. Heera, J. Stoëmenos, R. Kögler et al. · Journal of Applied Physics · 1995 · 156 citations

Materials Science, Materials Engineering, Ion Implantation +12

Density and structural changes in SiC after amorphization and annealing

V. Heera, F. Prokert, Norbert Schell et al. · Applied Physics Letters · 1997 · 92 citations

Materials Science, Materials Engineering, Ion Implantation +12

Millisecond flash lamp annealing of shallow implanted layers in Ge

C. Wündisch, M. Posselt, B. Schmidt et al. · Applied Physics Letters · 2009 · 64 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device

Jiaming Sun, W. Skorupa, T. Dekorsy et al. · Applied Physics Letters · 2004 · 55 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +14

On the nature of ion implantation induced dislocation loops in 4H-silicon carbide

Per O. Å. Persson, Lars Hultman, Martin S. Janson et al. · Journal of Applied Physics · 2002 · 52 citations

Materials Science, Materials Engineering, 4H-silicon Carbide +15