K. Wollschläger

Properties of ion beam synthesized buried silicon nitride layers with rectangular nitrogen profiles

W. Skorupa, K. Wollschläger, R. Grötzschel et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1987 · 30 citations

Engineering, Materials Engineering, Materials Science +14

SiO compound formation by oxygen ion implantation into silicon

Edward Hensel, K. Wollschläger, Dietmar Schulze et al. · Surface and Interface Analysis · 1985 · 24 citations

Engineering, Materials Engineering, Materials Science +14

Properties of buried insulating layers in silicon formed by high dose implantation at 60 keV

W. Skorupa, K. Wollschläger, R. Grötzschel et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1988 · 17 citations

Engineering, Materials Engineering, Materials Science +11

Investigation of ion beam synthesized FeSi2 and the α→β-phase transformation

D. Panknin, E. Wieser, K. Wollschläger et al. · Vacuum · 1993 · 16 citations

Natural Sciences, Materials Engineering, Materials Science +14