Structural and electrical properties of InSb epitaxial films grown on GaAs by low-pressure MOCVD

The preparation of InSb and InAs1−x Sbx by metalorganic chemical vapor deposition

R. M. Biefeld · Journal of Crystal Growth · 1986 · 98 citations

Engineering, Materials Engineering, Materials Science +12

Properties of MBE grown InSb and InSb1−<i>x</i>Bi<i>x</i>

A. J. Noreika, J. Greggi, W. J. Takei et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1983 · 80 citations

Natural Sciences, Materials Science, Physics +17

Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy

G. M. Williams, C. R. Whitehouse, C. F. McConville et al. · Applied Physics Letters · 1988 · 69 citations · Full text

Engineering, Materials Engineering, Materials Science +17

High-mobility InSb grown by organometallic vapor phase epitaxy

D. Kurt Gaskill, Gregory T. Stauf, N. Bottka · Applied Physics Letters · 1991 · 62 citations

Engineering, Materials Engineering, Materials Science +17

Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxy

P. E. Thompson, J. L. Davis, James Waterman et al. · Journal of Applied Physics · 1991 · 58 citations

Natural Sciences, Electrical Engineering, Materials Science +17