Concepedia

M.A. McKee

MM

Statistics

Publications

6

Citations

133

H-Index

6

Active since

1988

Affiliations

Emcore (United States)(Current)

Electronics and Telecommunications Research Institute

M.A. McKee is an author at Emcore (United States) specializing in materials science, engineering, and epitaxial growth.

Publications per year

1988–1994

6

Publications

6

A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactor

Gary S. Tompa, M.A. McKee, C. Beckham et al. · Journal of Crystal Growth · 1988 · 58 citations

Engineering, Electrical Engineering, Materials Science +17

Structural and electrical properties of InSb epitaxial films grown on GaAs by low-pressure MOCVD

Byueng-Su Yoo, M.A. McKee, Sang‐Gi Kim et al. · Solid State Communications · 1993 · 17 citations

Natural Sciences, Materials Engineering, Materials Science +16

Design and operating characteristics of a metalorganic vapor phase epitaxy production scale, vertical, high speed, rotating disk reactor

Gary S. Tompa, P. Zawadzki, K. Moy et al. · Journal of Crystal Growth · 1994 · 16 citations

Engineering, Materials Engineering, Materials Science +8

Uniform growth of InSb on GaAs in a rotating disk reactor by LP-MOVPE

M.A. McKee, ByungIn Yoo, R. A. Stall · Journal of Crystal Growth · 1992 · 16 citations

Engineering, Electrical Engineering, Materials Science +11

Growth of highly uniform, reproducible InGaAs films in a multiwafer rotating disk reactor by MOCVD

M.A. McKee, P. Norris, R. A. Stall et al. · Journal of Crystal Growth · 1991 · 14 citations

Engineering, Materials Engineering, Materials Science +14

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