P. E. Thompson

Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxy

P. E. Thompson, J. L. Davis, James Waterman et al. · Journal of Applied Physics · 1991 · 58 citations

Semiconductors, Bulk Insb, Electrical Engineering +13

Near band-edge photoluminescence from Si1−<i>x</i>Ge<i>x</i>/Si superlattices grown by molecular-beam epitaxy

T. Steiner, R. L. Hengehold, Y. K. Yeo et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 44 citations

Semiconductors, Materials Science, Band-edge Photoluminescence +15

Controlled <i>p</i>- and <i>n</i>-type doping of homo- and heteroepitaxially grown InSb

P. E. Thompson, John L. Davis, Ming-Jey Yang et al. · Journal of Applied Physics · 1993 · 15 citations

Doping Efficiency, Engineering, Semiconductor Materials +17

Sensitivity of Si-based zero-bias backward diodes for microwave detection

S.-Y. Park, Rong Yu, Sung-Yong Chung et al. · Electronics Letters · 2007 · 13 citations

Electrical Engineering, Engineering, Rf Semiconductor +10

Growth and characterisation of InSb/GaAs grown using molecular beam epitaxy

J. L. Davis, P. E. Thompson, R. J. Wagner · Semiconductor Science and Technology · 1990 · 10 citations

Materials Engineering, Materials Science, Electrical Engineering +15