R. J. Wagner

Dissipation and Dynamic Nonlinear Behavior in the Quantum Hall Regime

M.E. Cage, R.F. Dziuba, Bruce F. Field et al. · Physical Review Letters · 1983 · 226 citations

Quantum Dynamic, Quantum Science, Electrical Engineering +15

The effect of interface bond type on the structural and optical properties of GaSb/InAs superlattices

James Waterman, B. V. Shanabrook, R. J. Wagner et al. · Semiconductor Science and Technology · 1993 · 61 citations

Materials Science, Ii-vi Semiconductor, Optical Materials +14

Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxy

P. E. Thompson, J. L. Davis, James Waterman et al. · Journal of Applied Physics · 1991 · 58 citations

Semiconductors, Bulk Insb, Electrical Engineering +13

Epitaxial growth of deposited amorphous layer by laser annealing

S.S. Lau, W. F. Tseng, M-A. Nicolet et al. · Applied Physics Letters · 1978 · 57 citations

Materials Science, Materials Engineering, Advanced Laser Processing +12

Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy

B. R. Bennett, B. V. Shanabrook, R. J. Wagner et al. · Applied Physics Letters · 1993 · 54 citations

Materials Science, Ii-vi Semiconductor, Engineering +13