Semiconductor Science and Technology · 1993 · 61 citations · 8 references
Materials ScienceIi-vi SemiconductorOptical MaterialsEngineeringPhysicsOptical PropertiesGasb/inas SuperlatticesX-ray DiffractionApplied PhysicsCondensed Matter PhysicsSuperconductivityHigh Tc SuperconductorsSemiconductor MaterialInterface Bond ConfigurationMolecular Beam EpitaxyInterface Bond TypeSemiconductor Nanostructures
The effect of interface bond configuration on the structural and optical properties of short-period ( approximately=50 AA) GaSb/InAs superlattices has been examined. Structures consisting of eight monolayers of GaSb and seven monolayers of InAs with either 'GaAs-like' or 'InSb-like' interface bonds were grown by MBE. Evidence for differences in the structural properties, vibrational properties and band structure of the two types of material was obtained using X-ray diffraction, Raman scattering, interband magneto-absorption and photoconductivity measurements.
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Folded acoustic and quantized optic phonons in (GaAl)As superlattices
C. Colvard, T. A. Gant, M. V. Klein et al. · Physical review. B, Condensed matter · 1985 · 558 citations
Optical absorption of In1−xGaxAsGaSb1−yAsy superlattices
G.A. Sai-Halasz, L. L. Chang, J.‐M. Welter et al. · Solid State Communications · 1978 · 178 citations