Applied Physics Letters · 1979 · 118 citations · 10 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsCarrier TransportElectronic Band StructureSemiconductor PhysicsSemiconductor Thin FilmsWide Band Gap SemiconductorsWide-bandgap SemiconductorsCarrier ConcentrationCarrier DynamicsCarrier RecombinationCarrier Transport In SemiconductorsElectron TransferElectron Transport In SemiconductorsSuperlatticesTransport In Semiconductors
The semiconductor-semimetal transition in InAs-GaSb superlattices is observed at a layer thickness in the vicinity of 100 Å. The transition manifests itself in an increase in the measured carrier concentration as a result of electron transfer from GaSb to InAs when ground subbands of electrons and heavy holes cross each other. Shubnikov-de Haas measurements confirm the carrier enhancement in the semimetallic state.
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A new semiconductor superlattice
G.A. Sai-Halasz, Raphael Tsu, L. Esaki · Applied Physics Letters · 1977 · 564 citations
Optical absorption of In1−xGaxAsGaSb1−yAsy superlattices
G.A. Sai-Halasz, L. L. Chang, J.‐M. Welter et al. · Solid State Communications · 1978 · 178 citations