John L. Davis

Ge-Epitaxial-PbS Heterojunctions

John L. Davis, Marriner K. Norr · Journal of Applied Physics · 1966 · 70 citations

Semiconductors, Chemical Engineering, Optical Materials +13

Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy

B. R. Bennett, B. V. Shanabrook, R. J. Wagner et al. · Applied Physics Letters · 1993 · 54 citations

Materials Science, Ii-vi Semiconductor, Engineering +13

Molecular beam epitaxy growth of InSb films on GaAs

John L. Davis, Philip E. Thompson · Applied Physics Letters · 1989 · 43 citations

Materials Science, Semiconductors, Hall Mobilities +12

Controlled <i>p</i>- and <i>n</i>-type doping of homo- and heteroepitaxially grown InSb

P. E. Thompson, John L. Davis, Ming-Jey Yang et al. · Journal of Applied Physics · 1993 · 15 citations

Doping Efficiency, Engineering, Semiconductor Materials +17

Variations of energies and line shapes of the electroreflectance spectra of epitaxial Al<i>x</i>Ga1−<i>x</i>As

J. M. Wrobel, Lee C. Bassett, J. L. Aubel et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1987 · 14 citations

Engineering, Eer Spectra, Chemistry +18