Applied Physics Letters · 2000 · 65 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMagnetic MaterialsMaterials PhysicsAntiferromagnetic MaterialsFerromagnetic MaterialsFerromagnetismMagnetic OxidesSpintronic MaterialsSpintronicsInterdiffusionJunction ResistanceOxidationPinned Magnetic LayersSpin-dependent TransportThermal StabilityTunnel JunctionsTunneling Magnetoresistance
In this work, submicron-size (down to 0.273 μm2) spin–dependent tunnel junctions with resistance as low as ∼30 Ω μm2 have been fabricated, where the tunneling barrier of AlOx was formed by in situ natural oxidation. These junctions annealed at 250 °C for 5 h showed tunneling magnetoresistance (TMR) of 14.3% and 25.8% for the pinned layers of CoFe/RuRhMn and CoFe/PtMn, respectively, while the TMR is further increased to 31.6% for a synthetic antiferromagnetic pinned layer of CoFe/Ru/CoFe/PtMn due to less interdiffusion at CoFe/Ru interface. The investigation has indicated that the growth of ultrathin Al layer is very sensitive to the surface roughness of bottom ferromagnetic electrode, and large surface roughness leads to small junction resistance.
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Large tunneling magnetoresistance enhancement by thermal anneal
R. C. Sousa, J. J. Sun, V. Soares et al. · Applied Physics Letters · 1998 · 188 citations
Natural Sciences, Electrical Engineering, Materials Science +13
Dielectric breakdown of ferromagnetic tunnel junctions
W. Oepts, H. J. Verhagen, W. J. M. de Jonge et al. · Applied Physics Letters · 1998 · 75 citations · Full text
Natural Sciences, Electrical Engineering, Materials Science +13