Concepedia

Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins

Christopher L. Frewin, Corrado Bongiorno, Ruggero Anzalone, Stephen E. Saddow, Francesco La Via

Diamond and Related Materials · 2009 · 49 citations · 27 references

Concepts

EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDefectsDefects In Electronic MaterialsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor HeterostructuresStacking FaultsDefect ClustersDefect EngineeringSilicon CarbideSilicon Carbide (Sic) MaterialsStacking Fault DynamicsStacking Faults In SemiconductorsStructural Defects

References

27

Electron Microscopy of Thin Crystals

Nature · 1963 · 4K citations

Natural Sciences, Materials Science, Physics +10

Electron microscopy of thin crystals

B.W. Cahn · Journal of Nuclear Materials · 1967 · 953 citations

Natural Sciences, Materials Science, Physics +10

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

Shigehiro Nishino, J. A. Powell · Applied Physics Letters · 1983 · 926 citations

Engineering, Materials Engineering, Materials Science +17

Advances in Silicon Carbide Processing and Applications

Anant Agarwal, Stephen E. Saddow · Medical Entomology and Zoology · 2004 · 317 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

Christian A. Zorman, Aaron J. Fleischman, A.S. Dewa et al. · Journal of Applied Physics · 1995 · 225 citations

Natural Sciences, Materials Engineering, Materials Science +17