Photoluminescence investigation of low-temperature capped self-assembled InAs/GaAs quantum dots

Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces

D. Leonard, Mohan Krishnamurthy, C.M. Reaves et al. · Applied Physics Letters · 1993 · 1.7K citations

Natural Sciences, Materials Science, Physics +15

1.3 μm room-temperature GaAs-based quantum-dot laser

Diana L. Huffaker, G. Park, Zhihui Zou et al. · Applied Physics Letters · 1998 · 761 citations

Engineering, Electrical Engineering, Materials Science +15

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Kenichi Nishi, Hideaki Saito, S. Sugou et al. · Applied Physics Letters · 1999 · 592 citations

Engineering, Materials Engineering, Materials Science +17

Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment

Marius Grundmann, N. N. Ledentsov, O. Stier et al. · Applied Physics Letters · 1996 · 224 citations

Natural Sciences, Materials Science, Condensed Matter Physics +16

In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode

W. Seifert, Niclas Carlsson, Mark S. Miller et al. · Progress in Crystal Growth and Characterization of Materials · 1996 · 216 citations

Natural Sciences, Materials Science, Physics +15