Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment

Abstract

In photoluminescence spectra of nanometer-scale pyramidal-shaped InAs/GaAs quantum dots allowed optical transitions involving excited hole states are revealed in addition to the ground state transition. Detailed theoretical calculations of the electronic structure, including strain, piezoelectric and excitonic effects, agree with the experimental data and lead to unambiguous assignment of the transitions.