Properties of SiO2 films formed by oxygen implantation into silicon

Formation of SiO₂ Films by Oxygen-Ion Bombardment

Atsutomo Tooi · Japanese Journal of Applied Physics · 1966 · 103 citations

Natural Sciences, Materials Engineering, Materials Science +12

Determination of deep energy levels in Si by MOS techniques

W.R. Fahrner, A. Goetzberger · Applied Physics Letters · 1972 · 87 citations

Engineering, Materials Engineering, Materials Science +11

Static technique for precise measurements of surface potential and interface state density in MOS structures

K. Ziegler, E. Klausmann · Applied Physics Letters · 1975 · 67 citations

Engineering, Electrical Engineering, Materials Science +17

Formation of thin SiO2 films by high dose oxygen ion implantation into silicon and their investigation by IR techniques

J. Dylewski, M.C. Joshi · Thin Solid Films · 1976 · 40 citations

Engineering, Materials Engineering, Materials Science +14

Model calculations of profiles and dose of high dose ion implants influenced by sputtering

H. Kräutle · Nuclear Instruments and Methods · 1976 · 36 citations

Medicine, Materials Engineering, Materials Science +12