Determination of deep energy levels in Si by MOS techniques

Abstract

Ions are implanted into a Si–SiO2 interface. If the distribution is several hundred angstroms wide, the ions create interface states at energies corresponding to their bulk levels. With most elements investigated, agreement with previous data is good. Energy levels of the elements Se, Be, Cd, Sn, Ti, Pb, S, C, Ba, Ta, V, Mn, Cs, and Ge were determined by the MOS technique.