Physical Review · 1957 · 76 citations · 6 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsInorganic ChemistrySemiconductor MaterialsDopingElectrical ConductivityMetalsSemiconductor Device MaterialsConductionConduction BandNeutron ActivationSiliconSilicon DopingSilicon Electrical PropertiesValence BandValence Band Structure
Zinc has an acceptor level at 0.31 ev from the valence band as noted by Fuller and Morin. Under proper doping conditions, another level is observed at 0.55 ev from the conduction band in $n$-type silicon samples into which zinc has been diffused. Gold, manganese, and iron, however, have levels close to 0.55 ev. Gold is eliminated as an interfering impurity on the basis of neutron activation analysis. Manganese and iron are unlikely to be present in high enough concentrations on the basis of their electrical activity in samples deliberately doped with these elements. Mobility and radioactive solubility studies tend to confirm the hypothesis that the 0.55-ev level represents a second acceptor level associated with zinc.
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Properties of Gold-Doped Silicon
C. B. Collins, R. O. Carlson, C. J. Gallagher · Physical Review · 1957 · 261 citations
Diffusion and Electrical Behavior of Zinc in Silicon
C. S. Fuller, François Morin · Physical Review · 1957 · 75 citations
Properties of Silicon Doped with Manganese
R. O. Carlson · Physical Review · 1956 · 45 citations