Properties of Silicon Doped with Manganese

Abstract

Manganese acts as a donor impurity in silicon, introducing a level 0.53\ifmmode\pm\else\textpm\fi{}0.03 ev from the conduction band. The distribution coefficient of manganese in silicon is \ensuremath{\sim}${10}^{\ensuremath{-}5}$ as determined by radioactive tracer techniques and checked by electrical measurements. Precipitation limits the electrically active manganese to 5\ifmmode\times\else\texttimes\fi{}${10}^{14}$ ${\mathrm{cm}}^{\ensuremath{-}3}$ in crystals grown from a melt by the Czochralski technique. Higher concentrations can be obtained by diffusing in manganese at 1200\ifmmode^\circ\else\textdegree\fi{}C and quenching. Manganese introduces recombination centers into a crystal with observable effects at the ${10}^{12}$ ${\mathrm{cm}}^{\ensuremath{-}3}$ concentration in the crystals. Studies of Hall mobility under external radiation and lifetime studies by the photoconductive decay method show the presence of electron traps. Heating to only 200-300\ifmmode^\circ\else\textdegree\fi{}C causes the precipitation of the manganese and loss of electrical activity.