Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 15 citations · 0 references
Electrical EngineeringGate Charge StorageEngineeringApplied PhysicsAluminum Gallium NitrideAlgan/gan Flash Mos‐hfetsGan Power DeviceCharge TrapEnhancement Mode OperationThreshold ShiftingMicroelectronicsCategoryiii-v SemiconductorSemiconductor Device
Abstract Enhancement mode operation of AlGaN/GaN devices with breakdown voltage over 700 V is achieved by threshold shifting in a FLASH metal oxide semiconductor heterojunction field effect transistor. Charge stored during a programming step in either a charge trap or metal floating gate charge storage layer is responsible for this shift. Threshold stability for charge trap and floating gate memories is compared with charge trap devices losing <10% of initial threshold voltage shift after 10 4 seconds. Charge trap and floating gate devices maintain enhancement mode operation after 4 × 10 4 s. Threshold voltage as a function of drain bias for each storage method is compared. The most stable threshold voltage is observed when utilizing charge trap storage due to the discrete nature of the traps. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)