Design-oriented compact models for CNTFETs

Abstract

This paper deals with the compact modeling of an emerging technology: the carbon nanotube field-effect transistor (CNTFET). The paper proposed two design-oriented compact models, the first one for CNTFET with a classical behavior (MOSFET-like CNTFET), and the second one for CNTFET with an ambipolar behavior (Schottky-barrier CNTFET). Both models have been compared with exact numerical simulations and then implemented in VHDL-AMS