Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon

Ellipsometry and polarized light

R. M. A. Azzam, N. M. Bashara, D. Thorburn Burns · Analytica Chimica Acta · 1987 · 1.7K citations

Photometry, Optical Materials, Engineering +3

Optical properties of thin films

D. E. Aspnes · Thin Solid Films · 1982 · 1.6K citations

Materials Science, Optical Materials, Engineering +5

Dielectric function and reflectivity of 3C–silicon carbide and the component perpendicular to the <i>c</i> axis of 6H–silicon carbide in the energy region 1.5–9.5 eV

S. Logothetidis, J. Petalas · Journal of Applied Physics · 1996 · 85 citations

Optical Materials, Engineering, 6H-sic Single Crystals +20

Optical and loss spectra of SiC polytypes from ab initio calculations

B. Adolph, K. Tenelsen, V. I. Gavrilenko et al. · Physical review. B, Condensed matter · 1997 · 49 citations

Crystal Structure, Optical Materials, Engineering +23

Reflectivity study of hexagonal GaN films grown on GaAs: Surface roughness, interface layer, and refractive index

S. Shokhovets, R. Goldhahn, V. Cimalla et al. · Journal of Applied Physics · 1998 · 38 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13