W. Attenberger

Structural and morphological investigations of the initial stages in solid source molecular beam epitaxy of SiC on (111)Si

W. Attenberger, J.K.N. Lindner, V. Cimalla et al. · Materials Science and Engineering B · 1999 · 23 citations

Materials Science, Materials Engineering, Engineering +8

Investigation of the nucleation and growth of SiC nanostructures on Si

F. Scharmann, P. Maslarski, W. Attenberger et al. · Thin Solid Films · 2000 · 21 citations

Materials Science, Engineering, Nanotechnology +7

Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon

J. Scheiner, R. Goldhahn, V. Cimalla et al. · Materials Science and Engineering B · 1999 · 14 citations

Materials Engineering, Materials Science, Engineering +5

Interface properties of TiO2 on Si formed by simultaneous implantation and deposition of titanium and oxygen ions

W. Attenberger, G. Thorwarth, D. Manova et al. · Surface and Coatings Technology · 2001 · 12 citations

Materials Science, Ion Implantation, Engineering +8

Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si

V. Cimalla, W. Attenberger, J. Lindner et al. · Materials science forum · 2000 · 12 citations

Materials Engineering, Materials Science, Engineering +7