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Photobleachable silicon-containing molecular resist for deep UV lithography
25
Citations
16
References
2006
Year
Materials ScienceEngineeringBeam LithographyApplied PhysicsMolecule-based MaterialMolecular SwitchDeep Uv LithographyOrganic ChemistryMolecular MaterialOptoelectronic DevicesPhotopolymer NetworkChemistryMolecular EngineeringMolecular ResistOptoelectronicsNanolithography MethodPolyhedral Oligomeric SilsesquioxaneOrganic-inorganic Hybrid Material
A novel molecular resist material based on polyhedral oligomeric silsesquioxane, possessing diazoketo groups, was successfully synthesized for deep UV lithography. The initial lithographic evaluation of the molecular resist shows the potential of the new platform for the next generation resists.
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