Selective Epitaxy of III–V Compounds by Low‐Temperature Hydride VPE

Abstract

In this paper we report on the selective epitaxy of , , and accomplished in a double‐barrel hydride vapor‐phase epitaxy (VPE) reactor, using films as the pattern‐defining masks. All growths were done at temperatures as low as 482°–570°C and with reactant concentrations about 10X lower than in usual hydride VPE processes. Some of the experiments were done using separated Group III and Group V reactant streams to attempt atomic layer epitaxy growths. We also discuss room‐temperature plasma etching with mixtures of and and the regrowth of in the etched features. Completely selective, morphologically smooth regrowth was demonstrated at temperatures below 570°C and with low reactant concentrations. The above techniques could lead to novel processing procedures for a variety of devices,e.g., optoelectronic integrated circuits, optical waveguides, 2‐ and 3‐dimensional quantum structures, etc.